IRL2505 DATASHEET PDF

This benefit, combined with. The TO is universally preferred for all commercial-. Industrial applications at power dissipation levels to. The low thermal resistance and. Absolute Maximum Ratings.

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This benefit, combined with. The TO is universally preferred for all commercial-. Industrial applications at power dissipation levels to. The low thermal resistance and. Absolute Maximum Ratings. T STG. Power Dissipation. Linear Derating Factor. Gate-to-Source Voltage. Operating Junction and. Storage Temperature Range. Soldering Temperature, for 10 seconds. Mounting torque, or M3 srew. Thermal Resistance. Case-to-Sink, Flat, Greased Surface. PD - C. Coefficient ——— 0. R DS on. Static Drain-to-Source On-Resistance ——— ——— 0.

V GS th. Gate Threshold Voltage. I DSS. Drain-to-Source Leakage Current. I GSS. Gate-to-Source Forward Leakage. Gate-to-Source Reverse Leakage. Q g Total Gate Charge. Q gs Gate-to-Source Charge. Q gd Gate-to-Drain "Miller" Charge. Turn-On Delay Time. Rise Time. Turn-Off Delay Time. L S Internal Source Inductance. Between lead,. C iss Input Capacitance. C oss Output Capacitance. Source-Drain Ratings and Characteristics. I S Continuous Source Current.

Body Diode. Q rr Reverse Recovery Charge. See fig. See Figure Calculated continuous current based on maximum allowable. Download IRL Datasheet. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO is universally preferred for all commercial- Industrial applications at power dissipation levels to approximately 50 watts.

The low thermal resistance and low package cost of the TO contribute to its wide acceptance throughout the industry. Calculated continuous current based on maximum allowable junction temperature;for recommended current-handling of the package refer to Design Tip 2 www.

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Datasheet IRL2505

Coefficient ——— 0. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The low thermal resistance and low package cost of the TO contribute to its wide acceptance throughout the industry. Datasheet IRL See fig.

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IRL2505 MOSFET. Datasheet pdf. Equivalent

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