IRFD014 DATASHEET PDF

The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. Repetitive rating; pulse width limited by maximum junction temperature see fig. C, Oct www. Vishay Siliconix. Q g Max.

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Vishay Siliconix. Q g Max. Q gs nC. Q gd nC. Lead Pb -free. The 4 pin DIP package is a low cost machine-insertable.

The dual drain serves as a thermal. Drain-Source Voltage. Gate-Source Voltage. Continuous Drain Current. Pulsed Drain Current a.

Linear Derating Factor. Single Pulse Avalanche Energy b. Maximum Power Dissipation. Operating Junction and Storage Temperature Range. Soldering Recommendations Peak Temperature. Repetitive rating; pulse width limited by maximum junction temperature see fig.

Document Number: C, Oct Maximum Junction-to-Ambient. R thJA. Drain-Source Breakdown Voltage. V DS Temperature Coefficient. Gate-Source Threshold Voltage. Gate-Source Leakage. Zero Gate Voltage Drain Current. Drain-Source On-State Resistance. Forward Transconductance. V GS th. I GSS. I DSS. R DS on. Input Capacitance. Output Capacitance. Reverse Transfer Capacitance. Total Gate Charge.

Gate-Source Charge. Gate-Drain Charge. Turn-On Delay Time. Rise Time. Turn-Off Delay Time. Fall Time. C iss. C oss. C rss. Internal Drain Inductance. Internal Source Inductance. Between lead,.

L S die contact. Drain-Source Body Diode Characteristics. Continuous Source-Drain Diode Current. Pulsed Diode Forward Current a. I SM p - n junction diode. Body Diode Voltage. Body Diode Reverse Recovery Time.

Body Diode Reverse Recovery Charge. Forward Turn-On Time. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

C, Oct www.

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IRFD014 MOSFET. Datasheet pdf. Equivalent

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IRFD014 Datasheet

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