IRF830 DATASHEET PDF

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Nell High Power Products. They are designed, tested. They are designed as an extremely efficient and reliable. These transistors can be operated directly from integrated. Ultra low gate charge 38nC Max. Low reverse transfer capacitance.

Fast switching capability. TO AB. D Drain. S Source. V DSS V. Q G nC max. V DSS. V DGR. Drain to Source voltage Note 1. Drain to Gate voltage. V GS Gate to Source voltage. I D Continuous Drain Current. I AR Repetitive avalanche current Note 1. E AR Repetitive avalanche energy Note 1.

E AS Single pulse avalanche energy Note 2. Total power dissipation. T J Operation junction temperature. T STG. Storage temperature. T L Maximum soldering temperature, for 10 seconds 1. Mounting torque, or M3 screw. Note: 1. Repetitive rating: pulse width limited by junction temperature.

Page 1 of 7. No Preview Available! R th j-c. R th c-s. R th j-a. Thermal resistance, junction to case. Thermal resistance, case to heatsink. Thermal resistance, junction to ambient. Drain to source breakdown voltage. Breakdown voltage temperature coefficient. I DSS. Drain to source leakage current. I GSS. Gate to source forward leakage current. Gate to source reverse leakage current. R DS ON. Static drain to source on-state resistance.

V GS TH. Gate threshold voltage. Forward transconductance. C ISS. Input capacitance. C OSS. Output capacitance. C RSS. Reverse transfer capacitance. Turn-on delay time. Turn-off delay time. Fall time. Internal drain inductance. Internal source inductance. Total gate charge. Gate to source charge. Gate to drain charge Miller charge. Between lead, 6mm from. Diode forward voltage. Continuous source to drain current. Integral reverse P-N junction. I SM Pulsed source current.

Q rr Reverse recovery charge. Page 2 of 7. Part Number. View PDF for Mobile. Intersil Corporation. Fairchild Semiconductor. Comset Semiconductors. New Jersey Semiconductor. Site map. Contact us. Buy Components. Privacy Policy.

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